| PART |
Description |
Maker |
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SKB04N60 SKP04N60 |
IGBTs & DuoPacks - 4A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKW30N60 |
IGBTs & DuoPacks - 30A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGP15N120 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| SGW02N12006 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
